CONDUCTIVE SPUTTERING TARGET AND METHOD FOR DEPOSITING A LAYER THEREWITH
개요
발명자
Ignacio CARETTI GIANGASPRO; David DEBRUYNE; Freddy FACK; Wilmert DE BOSSCHER
IPC 분류
CPC 분류
A target for sputtering in mid-frequency AC sputtering processes, or DC sputtering processes includes a target material layer mainly including M-doped LixPOy, wherein x is from 2.5 to 3.5 and wherein y is from 2.5 to 4.5, wherein M represents up to 40 wt. % of the target material layer, and wherein M is least one chemical element from groups 13 to 15 of the periodic table, wherein M is selected for providing electrical conductivity to the target material layer such that an electrical resistivity of the target material layer is at most 1000 Ω·cm at room temperature, and wherein the target material layer has a lamellar structure consisting of microscopic splats of material.
원문 (중국어)
A target for sputtering in mid-frequency AC sputtering processes, or DC sputtering processes includes a target material layer mainly including M-doped LixPOy, wherein x is from 2.5 to 3.5 and wherein y is from 2.5 to 4.5, wherein M represents up to 40 wt. % of the target material layer, and wherein M is least one chemical element from groups 13 to 15 of the periodic table, wherein M is selected for providing electrical conductivity to the target material layer such that an electrical resistivity of the target material layer is at most 1000 Ω·cm at room temperature, and wherein the target material layer has a lamellar structure consisting of microscopic splats of material.