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기록

PATTERN FORMATION METHOD

발명심사 중
13청구항 · 2 독립항
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개요

발명자

Hajime NAKABAYASHI; Tomohito YAMAJI; Kazuki YAMADA; Ryuichi ASAKO

IPC 분류

G3F 1/22H1L 21/33

CPC 분류

G3F1/22H1L21/332H1L21/337

A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

원문 (중국어)

A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.