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기록

RESIST COMPOSITION AND PATTERN FORMING PROCESS

발명심사 중
12청구항 · 1 독립항
§ Ⅰ

개요

발명자

Yutaro Otomo; Takahiro Suzuki; Kazuhiro Katayama; Takeshi Sasami; Tatsuya Suzuki; Yoshihiro Tsuji

IPC 분류

G3F 7/38G3F 7/20

CPC 분류

G3F7/38G3F7/2053

A resist composition comprising a base polymer comprising repeat units consisting of an iodized carboxylic acid anion bonded to the backbone and an organic cation and repeat units consisting of an iodized sulfonic acid anion bonded to the backbone and a sulfonium cation has a high sensitivity and resolution. A pattern of satisfactory profile with reduced LWR and improved CDU is formed therefrom.

원문 (중국어)

A resist composition comprising a base polymer comprising repeat units consisting of an iodized carboxylic acid anion bonded to the backbone and an organic cation and repeat units consisting of an iodized sulfonic acid anion bonded to the backbone and a sulfonium cation has a high sensitivity and resolution. A pattern of satisfactory profile with reduced LWR and improved CDU is formed therefrom.