METHOD FOR DETECTING DEFECTS IN A PHOTOLITHOGRAPHY MASK FROM AN AERIAL IMAGE
개요
발명자
Martin van Driel; Bjoern Barz; Bjoern Brauer; Alexander Freytag; Bjoern Froehlich; Dirk Seidel
IPC 분류
CPC 분류
The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.
원문 (중국어)
The invention relates to a method for detecting defects in a photolithography mask, the method comprising: i. Acquiring an aerial image of the photolithography mask; ii. Obtaining an underlying design of the photolithography mask; iii. Generating a plausible design of the acquired aerial image by solving an optimization problem that minimizes the deviation of a simulated aerial image of the plausible design from the acquired aerial image; and iv. Detecting defects in the photolithography mask by comparing the underlying design to the plausible design. The invention also relates to a corresponding system for detecting defects.