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Low Voltage Reference Generator Using MOS devices

发明专利审中
5浏览
20权利要求 · 3 独立
§ Ⅰ

卷宗概要

发明人

Weibiao Zhang; Ke Yun; Bruno W. Garlepp

IPC 分类

G5F 1/46G5F 1/567G5F 1/575

CPC 分类

G5F1/468G5F1/567G5F1/575

Techniques for generating reference voltages and reference currents from a supply voltage are disclosed. A disclosed reference voltage and reference current generator circuit includes a combination of transistor (e.g., MOS) devices and interconnect resistors. The interconnect resistors have temperature coefficients that are selected to negate temperature sensitive effects in the transistor devices due to electron mobility temperature behavior in the transistor devices. The interconnect resistors may be implemented as resistor stacks that include interconnected metal layers separated by electrically insulating layers.

原文(中文)

Techniques for generating reference voltages and reference currents from a supply voltage are disclosed. A disclosed reference voltage and reference current generator circuit includes a combination of transistor (e.g., MOS) devices and interconnect resistors. The interconnect resistors have temperature coefficients that are selected to negate temperature sensitive effects in the transistor devices due to electron mobility temperature behavior in the transistor devices. The interconnect resistors may be implemented as resistor stacks that include interconnected metal layers separated by electrically insulating layers.