CNIPA.AI
검색으로 돌아가기
기록

Power Gating for Memory Physical Layers

발명심사 중
20청구항 · 3 독립항
§ Ⅰ

개요

발명자

Saurabh Bhandari; Manjunath D. Haritsa; Sandeep Prajapati; Srinivas Sriadibatla

IPC 분류

G6F 3/6

CPC 분류

G6F3/611G6F3/634G6F3/673

In accordance with the described techniques, a device includes a host processor, a memory, and a memory physical layer. The memory physical layer enters an enhanced low power state in which a power supply is disconnected from a portion of the memory physical layer while the memory is inactive with respect to servicing memory requests of the host processor. In addition, the memory physical layer exits the enhanced low power state responsive to the memory being active with respect to servicing memory requests of the host processor and/or at least one memory request being enqueued for servicing by the memory.

원문 (중국어)

In accordance with the described techniques, a device includes a host processor, a memory, and a memory physical layer. The memory physical layer enters an enhanced low power state in which a power supply is disconnected from a portion of the memory physical layer while the memory is inactive with respect to servicing memory requests of the host processor. In addition, the memory physical layer exits the enhanced low power state responsive to the memory being active with respect to servicing memory requests of the host processor and/or at least one memory request being enqueued for servicing by the memory.