SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
案件概要
発明者
Yewon Shin; Dongkyu Kim; Jonghyuk Kim; Jaesun Yun; Hyunsook Yoon
IPC分類
CPC分類
A semiconductor device includes a lower structure and an upper structure. The upper structure includes an inter-metal insulating layer, a first upper conductive via, upper conductive patterns, and a capping insulating structure. The upper conductive patterns include a first input/output interconnection line and a first barrier structure. The first input/output interconnection line includes a first connection region and a first pad region. The first connection region includes a first side surface, a second side surface, and a third side surface that extends from ends of the first side surface and the second side surface. The first barrier structure includes a first internal barrier structure and an external barrier structure. The first internal barrier structure includes a first internal line portion, a second internal line portion, and a third internal portion.
原文(中国語)
A semiconductor device includes a lower structure and an upper structure. The upper structure includes an inter-metal insulating layer, a first upper conductive via, upper conductive patterns, and a capping insulating structure. The upper conductive patterns include a first input/output interconnection line and a first barrier structure. The first input/output interconnection line includes a first connection region and a first pad region. The first connection region includes a first side surface, a second side surface, and a third side surface that extends from ends of the first side surface and the second side surface. The first barrier structure includes a first internal barrier structure and an external barrier structure. The first internal barrier structure includes a first internal line portion, a second internal line portion, and a third internal portion.
外部リソース