SUBSTRATE PROCESSING APPARATUS
卷宗概要
发明人
Ji Mo Lee; Hyeong Mo Kang; Kyung-Sun Kim; Nam Kyun Kim; Yi Rop Kim; Hyuk Kim; Dong Hyeon Na; Yun A Lee; Hee Won Min; Kyoung Soo Chung
IPC 分类
CPC 分类
A substrate processing apparatus includes: a chamber configured to process a substrate; a first electrode configured to form plasma in an internal space of the chamber; a second electrode facing the first electrode and configured to form plasma in the internal space of the chamber; and a magnetic body to control the plasma formed in the internal space of the chamber. The magnetic body includes a magnetic field generator, an electrode structure, and a mimic structure. The magnetic field generator includes a coil formed by stacked turns of a wire having two ends. The electrode structure is formed by both ends of the wire. The mimic structure is attached to the magnetic field generator and spaced apart from the electrode structure. The electrode structure has a length and the mimic structure has a length substantially the same as the length of the electrode structure.
原文（中文）
A substrate processing apparatus includes: a chamber configured to process a substrate; a first electrode configured to form plasma in an internal space of the chamber; a second electrode facing the first electrode and configured to form plasma in the internal space of the chamber; and a magnetic body to control the plasma formed in the internal space of the chamber. The magnetic body includes a magnetic field generator, an electrode structure, and a mimic structure. The magnetic field generator includes a coil formed by stacked turns of a wire having two ends. The electrode structure is formed by both ends of the wire. The mimic structure is attached to the magnetic field generator and spaced apart from the electrode structure. The electrode structure has a length and the mimic structure has a length substantially the same as the length of the electrode structure.