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기록

WAFER PRODUCING METHOD

발명심사 중
13청구항 · 1 독립항
§ Ⅰ

개요

발명자

Karl Heinz PRIEWASSER; Christoph EPPLE

IPC 분류

H1L 21/2

CPC 분류

H1L21/2021H1L21/2013H1L21/2016

The present disclosure relates to a substrate processing method for processing a substrate having a front side and a back side. A device area is formed on the front side of the substrate. The method comprises the steps of applying a protective sheeting to the front side of the substrate, processing the protective sheeting and the substrate from the front side using a cutting device to form a circumferential wherein at edge, the circumferential edge the processed protective sheeting and the processed substrate are flush in a thickness direction of the substrate, and applying a laser beam from the back side of the substrate to form a modified layer inside the substrate in a predetermined depth.

원문 (중국어)

The present disclosure relates to a substrate processing method for processing a substrate having a front side and a back side. A device area is formed on the front side of the substrate. The method comprises the steps of applying a protective sheeting to the front side of the substrate, processing the protective sheeting and the substrate from the front side using a cutting device to form a circumferential wherein at edge, the circumferential edge the processed protective sheeting and the processed substrate are flush in a thickness direction of the substrate, and applying a laser beam from the back side of the substrate to form a modified layer inside the substrate in a predetermined depth.