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기록

METHODS FOR FABRICATING SEMICONDUCTOR DEVICES AND RESIST COMPOSITIONS FOR UNDERLAYERS USED THEREFOR

발명심사 중
20청구항 · 2 독립항
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개요

발명자

Sang hyun Je; Joo sung Lee

IPC 분류

H1L 21/27G3F 7/4G3F 7/27G3F 7/11G3F 7/16

CPC 분류

H1L21/274G3F7/45G3F7/48G3F7/27G3F7/11G3F7/168

A method for fabricating a semiconductor device, includes forming an underlayer on a feature layer, forming a photoresist layer on the underlayer, exposing a first region of the photoresist layer, forming a photoresist pattern by removing a second region of the photoresist layer using a developer while retaining the first region of the photoresist layer, and processing the underlayer and the feature layer using the photoresist pattern, where each of the underlayer and the photoresist layer includes at least one of a benzooxazine monomer or a polymer produced by polymerizing the benzooxazine monomer.

원문 (중국어)

A method for fabricating a semiconductor device, includes forming an underlayer on a feature layer, forming a photoresist layer on the underlayer, exposing a first region of the photoresist layer, forming a photoresist pattern by removing a second region of the photoresist layer using a developer while retaining the first region of the photoresist layer, and processing the underlayer and the feature layer using the photoresist pattern, where each of the underlayer and the photoresist layer includes at least one of a benzooxazine monomer or a polymer produced by polymerizing the benzooxazine monomer.