PULSING DEPOSITION USING FAST RESPONSE MFC
案件概要
発明者
Zheyuan Chen; Jianxin Lei; Allyson N. Vu
IPC分類
CPC分類
Methods for forming work function layers (e.g., titanium nitride work function layers) for transistors are described. The methods energizing a process gas disposed in an inner volume of a processing chamber to create a plasma, and pulsing the process gas between a poison regime and a metallic regime using a fast response mass flow controller to deposit the work function layer on the substrate surface.
原文（中国語）
Methods for forming work function layers (e.g., titanium nitride work function layers) for transistors are described. The methods energizing a process gas disposed in an inner volume of a processing chamber to create a plasma, and pulsing the process gas between a poison regime and a metallic regime using a fast response mass flow controller to deposit the work function layer on the substrate surface.
外部リソース