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案件記録

SEMICONDUCTOR PACKAGING METHOD, SEMICONDUCTOR PACKAGE AND ELECTRONIC DEVICE

発明審査中
1閲覧数
10請求項 · 1 独立
§ Ⅰ

案件概要

IPC分類

H1L 23/498H1L 21/48H1L 21/56H1L 23/H1L 23/50H1L 23/538H1L 23/64H1L 25/7

CPC分類

H1L23/49811H1L21/4853H1L21/56H1L23/50H1L23/538H1L23/642H1L24/14H1L24/16H1L25/72H1L2224/1413H1L2224/16225

A semiconductor packaging method, which utilizes a connection structure and an interconnection device to realize electrical connections between semiconductor devices and a power supply and the interconnection between the semiconductor devices. A capacitor is provided and is located on at least one side of the connection structure, and on at least one side of the interconnection device. Packaging the capacitor inside the semiconductor package and arranging it in a same layer as the connection structure and the interconnection device maintains the size of the semiconductor package, is conducive to miniaturization, shortens the distance between the capacitor and the semiconductor devices, and improving the effect of the capacitor in filtering high-frequency noise in the resulting circuit, which is conducive to improving the working stability of the semiconductor devices.

原文(中国語)

A semiconductor packaging method, which utilizes a connection structure and an interconnection device to realize electrical connections between semiconductor devices and a power supply and the interconnection between the semiconductor devices. A capacitor is provided and is located on at least one side of the connection structure, and on at least one side of the interconnection device. Packaging the capacitor inside the semiconductor package and arranging it in a same layer as the connection structure and the interconnection device maintains the size of the semiconductor package, is conducive to miniaturization, shortens the distance between the capacitor and the semiconductor devices, and improving the effect of the capacitor in filtering high-frequency noise in the resulting circuit, which is conducive to improving the working stability of the semiconductor devices.

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