DEVICE COMPRISING A METALLIC WIRE AND FABRICATION PROCESS OF THE DEVICE
개요
출원인
STMicroelectronics International N.V.
발명자
Hugo NUEZ; Frederic BATTEGAY; Pierre TISSIER; Philippe BRUN
IPC 분류
CPC 분류
A device comprising a first layer, a trench partially running through the first layer extending from a first side, and being filled with a conductive etch stop layer, a conductive barrier layer covering the conductive etch stop layer, and a track of a first metallic material in contact with the barrier layer, in the trench, an opening in the first layer extending from a second side, opposite to the first side, of the dielectric or semiconductor layer, the opening running through the first layer all the way to the etch stop layer, and a first layer of a second metallic material covering the walls of the opening.
원문 (중국어)
A device comprising a first layer, a trench partially running through the first layer extending from a first side, and being filled with a conductive etch stop layer, a conductive barrier layer covering the conductive etch stop layer, and a track of a first metallic material in contact with the barrier layer, in the trench, an opening in the first layer extending from a second side, opposite to the first side, of the dielectric or semiconductor layer, the opening running through the first layer all the way to the etch stop layer, and a first layer of a second metallic material covering the walls of the opening.