THIN FILM TRANSISTORS HAVING COMBINED VIA AND GATE ELECTRODE
개요
발명자
Moshe DOLEJSI; Abhishek Anil SHARMA; Van H. LE; Christopher J. WIEGAND; Gregory J. GEORGE; Vladimir NIKITIN; Travis W. LAJOIE; Jannatul Fedous MOUSUMI; Suraj MATHEW
IPC 분류
CPC 분류
Thin film transistors are described. An integrated circuit structure includes a first dielectric layer having a conductive interconnect therein. A second dielectric layer is above the first dielectric layer. A conductive structure is in the second dielectric layer and in contact with the conductive interconnect. The conductive structure includes a lower conductive via portion continuous with an upper gate electrode portion that extends above and onto an uppermost surface of the second dielectric layer. A gate dielectric layer is on the upper gate electrode portion of the conductive structure. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer.
원문 (중국어)
Thin film transistors are described. An integrated circuit structure includes a first dielectric layer having a conductive interconnect therein. A second dielectric layer is above the first dielectric layer. A conductive structure is in the second dielectric layer and in contact with the conductive interconnect. The conductive structure includes a lower conductive via portion continuous with an upper gate electrode portion that extends above and onto an uppermost surface of the second dielectric layer. A gate dielectric layer is on the upper gate electrode portion of the conductive structure. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer.