METAL-INSULATOR-METAL (MIM) CAPACITOR ARCHITECTURES WITH LOW ELECTRICAL RESISTANCE
개요
발명자
Werner Juengling
IPC 분류
CPC 분류
Capacitor structures that include a cell metal-insulator-metal (MIM) stack within topographic cell containers and cell interconnects that couple the MIM stack of a plurality of cells in electrical parallel to shared capacitor terminals. A first cell interconnect of a first conductive material may span an area under a plurality of the cell containers and a second conductive material of the MIM stack that is confined as a liner of the cell containers is in contact with the first cell interconnect, thereby reducing an electrical resistance of a first shared capacitor electrode. An insulator and another conductive material of the MIM stack is formed within the plurality of cell containers. A second cell interconnect of another conductive material may span an area over a plurality of the cell containers to further couple the MIM stacks of a plurality of cells in electrical parallel to another shared capacitor terminal.
원문 (중국어)
Capacitor structures that include a cell metal-insulator-metal (MIM) stack within topographic cell containers and cell interconnects that couple the MIM stack of a plurality of cells in electrical parallel to shared capacitor terminals. A first cell interconnect of a first conductive material may span an area under a plurality of the cell containers and a second conductive material of the MIM stack that is confined as a liner of the cell containers is in contact with the first cell interconnect, thereby reducing an electrical resistance of a first shared capacitor electrode. An insulator and another conductive material of the MIM stack is formed within the plurality of cell containers. A second cell interconnect of another conductive material may span an area over a plurality of the cell containers to further couple the MIM stacks of a plurality of cells in electrical parallel to another shared capacitor terminal.