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기록

SEMICONDUCTOR DEVICE INCLUDING BONDING OF STACKED STRUCTURE PARTS AND METHOD OF FABRICATING THE SAME

발명심사 중
10청구항 · 2 독립항
§ Ⅰ

개요

IPC 분류

H1L 23/H1L 25/65H10B 80/

CPC 분류

H1L24/5H1L24/8H1L24/80H1L25/657H10B80/H1L2224/5026H1L2224/5082H1L2224/5193H1L2224/5564H1L2224/5567H1L2224/5647H1L2224/8147H1L2224/80234H1L2225/6513H1L2924/1438

A semiconductor device according to an embodiment includes a first stacked structure and a second stacked structure that are bonded to each other. The first stacked structure includes a first base body and a first connection structure disposed on a surface over the first base body. The second stacked structure includes a second base body and a second connection structure disposed on a surface over the second base body. Each of the first and second connection structures includes a connection pad, a carbon-based barrier layer disposed on the connection pad, and a bonding layer disposed on the carbon-based barrier layer and coupling the first and second connection structures to each other.

원문 (중국어)

A semiconductor device according to an embodiment includes a first stacked structure and a second stacked structure that are bonded to each other. The first stacked structure includes a first base body and a first connection structure disposed on a surface over the first base body. The second stacked structure includes a second base body and a second connection structure disposed on a surface over the second base body. Each of the first and second connection structures includes a connection pad, a carbon-based barrier layer disposed on the connection pad, and a bonding layer disposed on the carbon-based barrier layer and coupling the first and second connection structures to each other.