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案件記録

SEMICONDUCTOR DEVICE

発明審査中
2閲覧数
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Chulkwon Park; Bok-Yeon Won; Jonghyuk Kim; Honggyun Kim; Sun Hee Nam; Joohyeong Lim

IPC分類

H10B 12/H1L 21/762H10B 43/10H10B 43/27H10B 43/35H10B 80/

CPC分類

H10B12/31H1L21/76224H10B12/488H10B43/27H10B43/35H10B12/5H10B43/10H10B80/

A semiconductor device may include a first substrate, a circuit device on the first substrate, an interlayer insulating film on the circuit device, a second substrate on the interlayer insulating film, the second substrate including a first surface adjacent to the interlayer insulating film and a second surface opposite to the first surface, a device isolation trench in the second substrate and adjacent to the second surface, a device isolation structure in the device isolation trench, a through isolation film extending in the second substrate and the device isolation structure, and a through via extending into the through isolation film and electrically connected to the circuit device.

原文(中国語)

A semiconductor device may include a first substrate, a circuit device on the first substrate, an interlayer insulating film on the circuit device, a second substrate on the interlayer insulating film, the second substrate including a first surface adjacent to the interlayer insulating film and a second surface opposite to the first surface, a device isolation trench in the second substrate and adjacent to the second surface, a device isolation structure in the device isolation trench, a through isolation film extending in the second substrate and the device isolation structure, and a through via extending into the through isolation film and electrically connected to the circuit device.

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