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案件記録

SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

発明審査中
14請求項 · 1 独立
§ Ⅰ

案件概要

IPC分類

H10B 12/H1L 29/10

CPC分類

H10B12/488H10B12/482H10B12/485H10D62/314

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a bit line extending in a first direction, a first word line extending in a second direction and disposed over the bit line, and a second word line extending in the second direction and disposed over the bit line. The semiconductor device also includes a first pillar structure overlapping the first word line and the second word line.

原文(中国語)

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a bit line extending in a first direction, a first word line extending in a second direction and disposed over the bit line, and a second word line extending in the second direction and disposed over the bit line. The semiconductor device also includes a first pillar structure overlapping the first word line and the second word line.

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