CAPACITOR STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME

원문 (중국어)

There is provided a capacitor structure which is formed using a fabricating method in which a plate electrode is formed before a capacitor dielectric film. The capacitor structure includes a plate electrode which defines an electrode mold trench, an electrode mold insulating pattern which is in contact with the plate electrode, and includes a side wall part disposed on a side wall of the electrode mold trench, and a bottom part disposed on a bottom face of the electrode mold trench, a first capacitor electrode which is disposed on the bottom part of the electrode mold insulating pattern, and extends in a first direction, a capacitor dielectric film which is disposed on the side wall of the first capacitor electrode, and a second capacitor electrode which is disposed on the capacitor dielectric film and connected to the plate electrode.