FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SELECTIVELY GROWN METAL GATE STRUCTURES
卷宗概要
发明人
Guowei XU; Chia-Ching LIN; Tao CHU; Kan ZHANG; Lin HU; Yang ZHANG; Robin CHAO; Ting-Hsiang HUNG; Feng ZHANG; Chun Wing YEUNG; Chung-Hsun LIN; Oleg GOLONZKA; Anand S. MURTHY
IPC 分类
CPC 分类
Integrated circuit structures having selectively grown metal gate structures are described. For example, a structure includes a first vertical arrangement of horizontal nanowires or fin laterally spaced apart from a second vertical arrangement of horizontal nanowires or fin. A first gate stack is over the first vertical arrangement of horizontal nanowires or fin, the first gate stack having a first conductive layer over a first gate dielectric, and a first conductive fill over the first conductive layer. A second gate stack is over the second vertical arrangement of horizontal nanowires or fin, the second gate stack having a second conductive layer over a second gate dielectric, and a second conductive fill over the second conductive layer and over the first conductive fill. A portion of the second conductive fill is laterally adjacent to the first conductive fill without having the second conductive layer there between.
原文（中文）
Integrated circuit structures having selectively grown metal gate structures are described. For example, a structure includes a first vertical arrangement of horizontal nanowires or fin laterally spaced apart from a second vertical arrangement of horizontal nanowires or fin. A first gate stack is over the first vertical arrangement of horizontal nanowires or fin, the first gate stack having a first conductive layer over a first gate dielectric, and a first conductive fill over the first conductive layer. A second gate stack is over the second vertical arrangement of horizontal nanowires or fin, the second gate stack having a second conductive layer over a second gate dielectric, and a second conductive fill over the second conductive layer and over the first conductive fill. A portion of the second conductive fill is laterally adjacent to the first conductive fill without having the second conductive layer there between.