CAPPING LAYER FOR TRANSITION METAL DICHALCOGENIDE BASED TRANSISTOR STRUCTURES
卷宗概要
发明人
Arnab Sen Gupta; Sarah Atanasov; Uygar E. Avci; Pratyush Buragohain; Jiun-Ruey Chen; Mahmut Sami Kavrik; Ande Kitamura; Chia-Ching Lin; Kirby Maxey; Matthew Metz; Carl H. Naylor; Kevin P. O’Brien
IPC 分类
CPC 分类
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.
原文（中文）
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.