SEMICONDUCTOR DEVICE WITH BACKSIDE SUBSTRATE CUT UNDER THE STI STRUCTURE
卷宗概要
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
Xiaoming Yang; Reinaldo Vega; Ruilong Xie
IPC 分类
CPC 分类
A semiconductor device includes a logic device including a first portion of a first substrate extending vertically below a first source/drain region, a second portion of the first substrate extending vertically below a second source/drain region, a first shallow trench isolation (STI) extending vertically and isolating the first portion of the first substrate and the second portion of the first substrate, a backside power delivery network (BSPDN) below the logic device, a first dielectric layer extending vertically through the horizontal portion of the first substrate and connected to the first STI and the BSPDN, and an oxide trench wall over sidewalls of a backside contact.
原文（中文）
A semiconductor device includes a logic device including a first portion of a first substrate extending vertically below a first source/drain region, a second portion of the first substrate extending vertically below a second source/drain region, a first shallow trench isolation (STI) extending vertically and isolating the first portion of the first substrate and the second portion of the first substrate, a backside power delivery network (BSPDN) below the logic device, a first dielectric layer extending vertically through the horizontal portion of the first substrate and connected to the first STI and the BSPDN, and an oxide trench wall over sidewalls of a backside contact.