SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

원문 (중국어)

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, first and second isolation structures, first, second and third gates, first, second and third gate insulating layers, a drift region, and source/drain regions. The substrate in the first region includes fins. The first isolation structure surrounds the fins and exposes a part of each fin. The second isolation structure is disposed in the substrate in the second region. The first gate is disposed on the exposed portions of the fins. The second gate is disposed on the substrate in the second region and on a portion of the second isolation structure. The second gate insulating layer is disposed between the second gate and the substrate. The drift region is disposed in the substrate on a side of the second isolation structure away from the second gate, and extends below the second isolation structure.