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案件記録

DISPLAY DEVICE, METHOD OF FABRICATING DISPLAY DEVICE, AND ELECTRONIC DEVICE INCLUDING THE SAME

発明審査中
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Jong Hwan CHA; Hyun Su KIM

IPC分類

H10K 59/121H10K 59/123

CPC分類

H10K59/1213H10K59/123

A display device includes a substrate, a bottom electrode disposed on the substrate, a subsidiary metal layer disposed on the substrate and comprising a first auxiliary metal and a second auxiliary metal, wherein the subsidiary metal layer is disposed higher than the bottom electrode relative to an upper surface of the substrate, and a transistor disposed on the subsidiary metal layer. The transistor includes an active layer comprising a source region, a channel region, and a drain region, a gate electrode disposed on the channel region of the active layer, and a source electrode and a drain electrode disposed on the gate electrode. A first vertical extension of the source electrode contacts the first auxiliary metal through a first contact hole penetrating the source region of the active layer. The drain electrode contacts the second auxiliary metal through a second contact hole penetrating the drain region of the active layer.

原文(中国語)

A display device includes a substrate, a bottom electrode disposed on the substrate, a subsidiary metal layer disposed on the substrate and comprising a first auxiliary metal and a second auxiliary metal, wherein the subsidiary metal layer is disposed higher than the bottom electrode relative to an upper surface of the substrate, and a transistor disposed on the subsidiary metal layer. The transistor includes an active layer comprising a source region, a channel region, and a drain region, a gate electrode disposed on the channel region of the active layer, and a source electrode and a drain electrode disposed on the gate electrode. A first vertical extension of the source electrode contacts the first auxiliary metal through a first contact hole penetrating the source region of the active layer. The drain electrode contacts the second auxiliary metal through a second contact hole penetrating the drain region of the active layer.

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