STRUCTURE WITH MRAM AND INDUCTOR AND FABRICATING METHOD OF THE SAME
卷宗概要
发明人
Da-Jun Lin; Bin-Siang Tsai; Fu-Yu Tsai
IPC 分类
CPC 分类
A structure with an MRAM and an inductor includes a first dielectric layer. A second dielectric layer covers the first dielectric layer. Numerous second metal lines are embedded in the first dielectric layer. An MRAM is disposed between the second dielectric layer and the first dielectric layer. A magnetic core is disposed below the second dielectric layer and covers the second metal lines. The distance from the topmost surface of the magnetic core to the first dielectric layer is smaller than the distance from the topmost surface of the MRAM to the first dielectric layer. Numerous fourth metal lines are embedded in the second dielectric layer and disposed on the magnetic core. The fourth metal lines and the second metal lines are electrically connected through numerous first conductive plugs. The second metal lines, the fourth metal lines and the first conductive plugs form an inductor coil surrounding the magnetic core.
原文(中文)
A structure with an MRAM and an inductor includes a first dielectric layer. A second dielectric layer covers the first dielectric layer. Numerous second metal lines are embedded in the first dielectric layer. An MRAM is disposed between the second dielectric layer and the first dielectric layer. A magnetic core is disposed below the second dielectric layer and covers the second metal lines. The distance from the topmost surface of the magnetic core to the first dielectric layer is smaller than the distance from the topmost surface of the MRAM to the first dielectric layer. Numerous fourth metal lines are embedded in the second dielectric layer and disposed on the magnetic core. The fourth metal lines and the second metal lines are electrically connected through numerous first conductive plugs. The second metal lines, the fourth metal lines and the first conductive plugs form an inductor coil surrounding the magnetic core.