SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
卷宗概要
发明人
Jun Ku AHN; Gwang Sun JUNG; Jong Ho LEE; Uk HWANG
IPC 分类
CPC 分类
A semiconductor device may include a first electrode, a second electrode, an insulating layer interposed between the first electrode and the second electrode and including an opening having an inclined sidewall, a variable resistance layer formed in the opening, the variable resistance including a first surface and a second surface, the first surface facing the first electrode and having a first area, the second surface facing the second electrode and having a second area different from the first area, the variable resistance layer maintaining an amorphous state during a program operation, and a liner interposed between the variable resistance layer and the insulating layer and between the variable resistance layer and the first electrode.
原文（中文）
A semiconductor device may include a first electrode, a second electrode, an insulating layer interposed between the first electrode and the second electrode and including an opening having an inclined sidewall, a variable resistance layer formed in the opening, the variable resistance including a first surface and a second surface, the first surface facing the first electrode and having a first area, the second surface facing the second electrode and having a second area different from the first area, the variable resistance layer maintaining an amorphous state during a program operation, and a liner interposed between the variable resistance layer and the insulating layer and between the variable resistance layer and the first electrode.