Power semiconductor device, power device module, bridge arm circuit and electronic equipment
데이터 출처: EPO OPS
현재 전문을 불러올 수 없습니다. 조회된 기본 정보는 계속 확인할 수 있습니다.
개요
출원 번호
CN202310261822
발명자
CHEN LINGLIN; TANG LONGGU; GAO BO; ZHENG SHENG; XU SHANFENG
출원일
Mar 10, 2023
공개일
Sep 10, 2024
특허 패밀리 ID
92607159
IPC 분류
CPC 분류
The embodiment of the invention provides a power semiconductor device, a power device module, a bridge arm circuit and electronic equipment, relates to the field of semiconductor devices, and aims to solve the problem that bridge arm crosstalk may be generated when the power semiconductor device is applied to the bridge arm circuit as a switching device. The power semiconductor device comprises a power transistor and a discharge transistor which are integrated in a chip; the power transistor comprises a first grid electrode, a first source electrode and a first drain electrode, and the discharge transistor comprises a second grid electrode, a second source electrode and a second drain electrode; one of the second source electrode and the second drain electrode is connected with the first grid electrode, and the other of the second source electrode and the second drain electrode is connected with the first source electrode. The power semiconductor device can be applied to a power device module, a bridge arm circuit and electronic equipment.
EPO 조사 자료
항목을 선택하면 해당 공개문헌의 공식 자료를 조회합니다.
위 항목을 선택하여 자료를 확인하세요.