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기록

Power semiconductor device, power device module, bridge arm circuit and electronic equipment

기타 / 미제공알 수 없음

데이터 출처: EPO OPS

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92607159패밀리
§ Ⅰ

개요

출원인

HUAWEI TECH CO LTD

출원 번호

CN202310261822

발명자

CHEN LINGLIN; TANG LONGGU; GAO BO; ZHENG SHENG; XU SHANFENG

출원일

Mar 10, 2023

공개일

Sep 10, 2024

특허 패밀리 ID

92607159

IPC 분류

H01L27/088H02M1/00H02M1/088

CPC 분류

H02M1/0006H02M1/088

The embodiment of the invention provides a power semiconductor device, a power device module, a bridge arm circuit and electronic equipment, relates to the field of semiconductor devices, and aims to solve the problem that bridge arm crosstalk may be generated when the power semiconductor device is applied to the bridge arm circuit as a switching device. The power semiconductor device comprises a power transistor and a discharge transistor which are integrated in a chip; the power transistor comprises a first grid electrode, a first source electrode and a first drain electrode, and the discharge transistor comprises a second grid electrode, a second source electrode and a second drain electrode; one of the second source electrode and the second drain electrode is connected with the first grid electrode, and the other of the second source electrode and the second drain electrode is connected with the first source electrode. The power semiconductor device can be applied to a power device module, a bridge arm circuit and electronic equipment.

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