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SUBSTRATE FOR SIC SEMICONDUCTOR DEVICES, SIC BONDED SUBSTRATE, SIC POLYCRYSTAL SUBSTRATE, AND SIC POLYCRYSTAL SUBSTRATE MANUFACTURING METHOD
发明专利审中
1浏览
§ Ⅰ
卷宗概要
发明人
TAHARA, Daisuke; AOKI, Katsutoshi
申请日
Feb 18, 2024
公开日
Jan 6, 2026
IPC 分类
C30BC30BC30BH01LH01LH01LH01L
CPC 分类
C30BC30BC30BH01LH10DH10DH10D