测量双组分化合物晶片中缺陷的方法及其装置
本实施方式涉及用于测量双组分化合物晶片中缺陷的方法及其装置,该方法能够使用高度精确的定量测量方法来检测双组分化合物晶片中的P‑Count ScN缺陷。根据实施方式的一个方面,提供了用于测量双组分化合物晶片中缺陷的方法,并且该方法包括:第一步骤,测量由基质A元素和基质B元素组成的晶片中基质A元素和基质B元素的含量;以及第二步骤,计算在第一步骤中测量的基质A元素和基质B元素的比,以确定P‑Count ScN缺陷水平。
APPLICANTS
Browse source applicant names and unchanged name fields from imported patent records.
These are name-based results, not verified legal entities. Identical names may refer to different people or organizations; aliases and historical names are not merged.
This name was extracted from a distinct applicant node in the source XML.
1 indexed patent records
Patent counts refer to distinct records held by this site, not an applicant’s complete portfolio. A joint name field is not a single company.
Verified corpus date coverage and last import time are not currently available. Publication dates on patent records are not import dates. Cached directory results may lag behind new imports.
Search the local original applicant field containing this full text. Results may include joint lists or longer names; this is not an exact identity search.
Search patents with this applicant condition