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Original name record: 北京超弦存储器研究院; 北京大学

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1 indexed patent records

№ CN121331188AInvention
Active

一种交叉点阵存储阵列的操作方法

本发明提供一种交叉点阵存储阵列的操作方法，属于半导体存储器领域。本发明交叉点阵存储阵列中存储单元为金属‑铁电介质层‑金属的铁电电容，所述铁电电容的两端电极板分别与字线和位线相连，且为功函数不同的金属，该铁电电容具有较大正/负极化翻转矫顽电压和较小负/正极化翻转矫顽电压，即铁电电容具有非对称极化‑电压回滞曲线特性以及差异明显的正、负矫顽电场；在读写操作过程中分别对选中字线、未选中字线、位线施加特定大小的电压脉冲，使极化翻转电荷受干扰后的衰减量大幅度降低。本发明实现了更小的存储单元间的干扰、更高的位线感应裕度和更低的误码率。

❖北京超弦存储器研究院; 北京大学黄芊芊; 邓闵月; 曹胜杰; 黄如§ 1/6 ClaimsG11C 11/4063 (2006.01), G11C 11/408 (2006.01), G11C 11/4097 (2006.01)6