半导体装置及半导体装置的制造方法
一种半导体装置,包含:芯片,其由宽带隙半导体形成,并具有形成了第一导电型的半导体区的主面;第二导电型的基底杂质区,其形成于所述半导体区的表层部;第一杂质区,其形成于所述基底杂质区的表层部;以及第二杂质区,其形成于所述基底杂质区的表层部,且导电型与所述第一杂质区相反,所述第二杂质区在第一方向上与所述第一杂质区相邻,所述第二杂质区形成为在与所述第一方向正交的第二方向上延伸的带状,所述第二杂质区具有:凸部,其在所述第一方向上选择性地向所述第一杂质区突出。
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