半导体结构及其形成方法
本申请提供半导体结构及其形成方法,所述半导体结构包括:半导体衬底,所述半导体衬底包括若干晶体管区域,每个晶体管区域均形成有鳍片结构以及隔离相邻鳍片结构的隔离结构;栅介质层,位于所述鳍片结构表面;栅极层,覆盖所述鳍片结构顶面和侧壁;若干截断结构,贯穿所述栅极层至所述隔离结构表面。本申请提供一种半导体结构及其形成方法,可以有效控制伪栅极截断尺寸,即使有偏移也不至于影响器件可靠性。
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