半导体存储装置
SRAM单元包括有源区(N3)和电源布线(13)。在有源区(N3)形成有读出驱动晶体管(RPD),电源布线(13)形成在背面布线层,在俯视时与有源区(N3)具有重叠部分,供给电源电压VSS。相当于读出位线(RBL)的布线(63)形成在金属布线层。
APPLICANTS
Browse source applicant names and unchanged name fields from imported patent records.
These are name-based results, not verified legal entities. Identical names may refer to different people or organizations; aliases and historical names are not merged.
This name was extracted from a distinct applicant node in the source XML.
1 indexed patent records
Patent counts refer to distinct records held by this site, not an applicant’s complete portfolio. A joint name field is not a single company.
Verified corpus date coverage and last import time are not currently available. Publication dates on patent records are not import dates. Cached directory results may lag behind new imports.
Search the local original applicant field containing this full text. Results may include joint lists or longer names; this is not an exact identity search.
Search patents with this applicant condition