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Original name record: 中山德华芯片技术有限公司

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1 indexed patent records

№ CN121335232AInvention
Active

一种InGaAs单光子雪崩探测器及其制备方法

本发明公开了一种InGaAs单光子雪崩探测器及其制备方法，该单光子雪崩探测器包括从下至上生长的InP衬底、InP的buffer缓冲层、i‑InGaAs缓冲层、i‑InGaAs吸收层、i‑InGAsP过渡层、InGaAsP电场平滑过渡层、InP电荷层以及i‑InP扩散层；i‑InP扩散层的上表面设有介质膜，介质膜上形成有表面掺杂的扩散孔，介质膜及扩散孔的上表面形成有AlO/HfO钝化层；本发明能够降低隧穿漏电，抑制表面漏电，降低了器件的暗电流，降低器件暗计数，提升器件的探测率，实现高信噪比的弱光探测，且无需二次扩散，大幅降低了芯片制备工艺的难度以及成本。

❖中山德华芯片技术有限公司代智文; 高嘉咏; 张小宾; 宋明辉; 刘建庆§ 2/10 ClaimsH10F 30/225 (2025.01), H10F 77/30 (2025.01), H10F 71/00 (2025.01)10