CMP设备的控制方法、装置、设备、介质及产品
本申请提供一种CMP设备的控制方法、装置、设备、介质及产品,通过确定CMP设备中的修整臂和研磨盘的控制参数,并基于控制参数通过控制修整臂的非匀速摆动与研磨盘的旋转及平移运动相耦合,从而使修整头在研磨盘上形成复杂的复合运动轨迹,确保了修整头能够覆盖研磨盘表面的每一个区域,有效消除了修整头对研磨盘上承载的抛光垫在修整时存在的修整盲区和过度修整区域,为后续晶圆的抛光工艺提供了高度一致的表面条件,改善了晶圆加工的全局平坦化效果。
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