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№ CN121368943AInvention

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反铁磁性体材料、磁性体及绝缘体的双层膜、隧穿磁阻元件及磁存储器

反铁磁性体材料具有六方晶的结晶结构，且具有包含MnAB（0<x<0.5，A=Ga、Ge、Sn，B=Mg、Al、Si、P、Mn、Ni、Cu、Zn、As、Ru、Ag、Cd、In、Sb、Os、Au、Hg、Tl、Pb）、或(MnCr)GaGeSn（0<p<0.5、0<q<1、0<r<1、0<q+r≦1）的反铁磁性层、及层叠在其表面的绝缘体层。优选为，A为Ga及Sn中的至少一者。另外优选为，B为Mg、Al、Si、Mn、Cu、Zn、Ag、Cd、In、Sb、Au、Tl中的至少一个。

❖JSR株式会社; 国立大学法人东京大学; 国立大学法人东北大学都贺裕太; 是常隆; 田中克大; 中十知§ 8/14 ClaimsH10N 50/10 (2006.01), H10B 61/00 (2006.01), H10N 50/20 (2006.01) +110