一种硅烷、氯硅烷混合气处理工艺及控制系统、方法
本发明公开了一种硅烷、氯硅烷混合气处理工艺及控制系统、方法,涉及多晶硅生产中废气处理技术领域,工艺包括下述步骤:S1、混合气预处理;S2、氯硅烷深度脱除;S3、硅烷去除,经三级处理后至尾气中硅烷含量≤1.0mg/m、氯硅烷含量≤1.0mg/m,再放空尾气,同时公开了适用于该工艺的控制系统和控制方法,实现对多晶硅生产中产生的含氯硅烷、硅烷、氮气、氢气的混合工艺气体优化处理,减少碱液的使用,降低排放、降低生产成本。
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