适用于碳化硅衬底的干法刻蚀方法及干法刻蚀装置
本发明公开了一种适用于碳化硅衬底的干法刻蚀方法,包括:S1、将碳化硅晶圆放置于反应腔中的静电吸盘上;S2、开启高压电源向静电吸盘提供电荷,直至静电吸盘吸住碳化硅晶圆;S3、开始等离子体干法刻蚀工艺,直至完成等离子体干法刻蚀工艺;S4、关闭静电吸盘的高压电源,碳化硅晶圆与静电吸盘分离。该适用于碳化硅衬底的干法刻蚀方法通过提高吸附电压来主动降低接触热阻,使得静电吸盘能够直接对碳化硅晶圆进行有效散热,而无需使用传统的背面氦气冷却方式。
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