№ US20260002256A1発明
審査中METHOD FOR PRODUCING SILICON FILM AND SILICON FILM
METHOD FOR PRODUCING SILICON FILM AND SILICON FILM
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.
❖NIPPON SHOKUBAI CO., LTD.; HIROSHIMA UNIVERSITYTetsuya YAMAMOTO; Takashi ABE; Tatsuhiko AKIYAMA; Akinobu TERAMOTO§ 3/20 請求項C23C 16/24, C23C 16/419