METHOD FOR PRODUCING SILICON FILM AND SILICON FILM
案件概要
出願人
NIPPON SHOKUBAI CO., LTD.; HIROSHIMA UNIVERSITY
発明者
Tetsuya YAMAMOTO; Takashi ABE; Tatsuhiko AKIYAMA; Akinobu TERAMOTO
IPC分類
CPC分類
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.
原文（中国語）
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.
外部リソース