LATERAL MEASUREMENTS FOR DETECTING DELAMINATION OR WEAR IN A SEMICONDUCTOR DEVICE

原文（中国語）

A circuit device may be configured to perform early detection of degradation problems associated with delamination or cratering in the device. The device may comprise a semiconductor layer comprising at least a portion of one or more power transistors, a metallization layer formed over the semiconductor layer, and a plurality of excitation elements formed into the semiconductor layer, wherein the excitation elements extend through the semiconductor layer to the metallization layer such that an excitation pulse can be delivered into a first excitation element and received from a second excitation element after passing laterally through the metallization layer.