SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

原文（中国語）

Embodiments of the present disclosure provide a semiconductor device structure and methods of forming the same. The structure includes a first semiconductor layer disposed over a substrate, a source/drain region disposed adjacent the first semiconductor layer, a gate spacer disposed over the first semiconductor layer, a native oxide layer disposed between the gate spacer and the source/drain region and between the gate spacer and the first semiconductor layer, a gate dielectric layer disposed between the native oxide layer and the first semiconductor layer, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode layer includes a first portion having a first width and a second portion having a second width greater than the first width.