OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
案件概要
出願人
Japan Display Inc.; IDEMITSU KOSAN CO., LTD.
発明者
Hajime WATAKABE; Masashi TSUBUKU; Toshinari SASAKI; Takaya TAMARU; Marina MOCHIZUKI; Ryo ONODERA; Masahiro WATABE; Daichi SASAKI; Emi KAWASHIMA; Yuki TSURUMA
IPC分類
CPC分類
An oxide semiconductor film having crystallinity includes indium (In) and a first metal element (M1) selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. A crystal structure of the oxide semiconductor film is a bixbyite structure. At least a first peak of a (222) plane and a second peak of a (440) plane are observed in a diffraction pattern of the oxide semiconductor film obtained by an out-of-plane XRD measurement using Cu-Kα radiation. A ratio of an intensity of the first peak to an intensity of the second peak is less than or equal to 125.
原文（中国語）
An oxide semiconductor film having crystallinity includes indium (In) and a first metal element (M1) selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanoid elements. A crystal structure of the oxide semiconductor film is a bixbyite structure. At least a first peak of a (222) plane and a second peak of a (440) plane are observed in a diffraction pattern of the oxide semiconductor film obtained by an out-of-plane XRD measurement using Cu-Kα radiation. A ratio of an intensity of the first peak to an intensity of the second peak is less than or equal to 125.
外部リソース