検索に戻る
案件記録
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
発明審査中
3閲覧数
20請求項 · 3 独立
§ Ⅰ
案件概要
出願人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
発明者
Tzu-Ging LIN
IPC分類
H10D 62/10H10D 30/1H10D 30/43H10D 30/62H10D 30/67H10D 64/1H10D 89/10
CPC分類
H10D62/102H10D30/24H10D30/62H10D30/6735H10D64/17H10D89/10H10D30/14H10D30/43H10D30/6757H10D62/121
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.
原文（中国語）
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.
外部リソース