PHASE CHANGE MATERIAL RADIO-FREQUENCY (RF) SWITCH HAVING A REDUCED DIELECTRIC CONSTANT AROUND A HEATER ELEMENT AND METHOD FOR FORMING THE SAME
案件概要
出願人
Taiwan Semiconductor Manufacturing Company Limited
発明者
Tsung-Hsueh Yang; Yu-Wen Wang; Yu-Jui Tseng; Fu-Ting Sung; Kuo-Chyuan Tzeng
IPC分類
CPC分類
A phase change memory switch may be provided by forming a heater element, a first electrode, and a second electrode over an insulating layer that overlies a substrate; by forming encapsulated cavities formed within a dielectric material layer between a strip portion of the heater element and the first electrode and between the strip portion and the second electrode by depositing a dielectric material around, and over, the heater element, the first electrode, and the second electrode; and by forming a phase change material (PCM) portion over the heater element, the first electrode, and the second electrode such that the phase change material portion contacts the first electrode and the second electrode and is spaced from the heater element.
原文(中国語)
A phase change memory switch may be provided by forming a heater element, a first electrode, and a second electrode over an insulating layer that overlies a substrate; by forming encapsulated cavities formed within a dielectric material layer between a strip portion of the heater element and the first electrode and between the strip portion and the second electrode by depositing a dielectric material around, and over, the heater element, the first electrode, and the second electrode; and by forming a phase change material (PCM) portion over the heater element, the first electrode, and the second electrode such that the phase change material portion contacts the first electrode and the second electrode and is spaced from the heater element.
外部リソース