원래 이름 기록: OMNIVISION TECHNOLOGIES, INC.

The image sensor comprises a semiconductor layer and a vertical gate structure. The semiconductor layer has a first side and a second side opposite to the first side. The semiconductor layer includes a first photodiode and a second photodiode adjacent to the first photodiode. The vertical gate structure is disposed between the first photodiode and the second photodiode. The vertical gate structure includes a planar portion and a vertical gate portion. The planar portion is disposed proximate to the first side. The vertical gate portion is extended from the planar portion a depth into the semiconductor layer.