METHOD OF MANUFACTURING OXIDE THIN FILM
개요
출원인
Samsung Electronics Co., Ltd.; KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
발명자
Hyungjun KIM; Sanghun JEON; Hunbeom SHIN; Boeun PARK; Jeongil BANG; Jaeho LEE
IPC 분류
CPC 분류
Provided are a manufacturing method of an oxide thin film and an apparatus including the oxide thin film. The manufacturing method of the oxide thin film includes forming an amorphous oxide layer on a base layer, raising a temperature of the amorphous oxide layer using microwaves at a first pressure, and forming a crystal structure in the oxide thin film by cooling the temperature-raised oxide layer at a second pressure different from the first pressure.
원문 (중국어)
Provided are a manufacturing method of an oxide thin film and an apparatus including the oxide thin film. The manufacturing method of the oxide thin film includes forming an amorphous oxide layer on a base layer, raising a temperature of the amorphous oxide layer using microwaves at a first pressure, and forming a crystal structure in the oxide thin film by cooling the temperature-raised oxide layer at a second pressure different from the first pressure.