SINGLE-CRYSTALLINE AL2O3 DIELECTRIC COMPATIBLE WITH TWO-DIMENSIONAL MATERIALS AND INTEGRATED DEVICE THEREOF
개요
출원인
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES
발명자
Zeng Feng Di; Zi Ao Tian; Dao Bing Zeng; Miao Zhang; Jie Jun Zhang
IPC 분류
CPC 분류
The present invention relates to a single-crystalline AlOdielectric compatible with two-dimensional materials and an integrated device thereof. A single-crystalline Al thin film is produced on a single-crystalline graphene/germanium (110) substrate via the van der Waals (vdW) epitaxy approach, the single-crystalline Al thin film is peeled off from the graphene/germanium substrate, and intercalative oxidation is performed to produce the single-crystalline AlOdielectric compatible with two-dimensional materials on the lower surface of the single-crystalline Al thin film. The gate leakage current (J<1×10A cm), interface state density (D=8.4×10cmeV), and dielectric strength (E=17.4 MV/cm) of the single-crystalline AlOdielectric obtained in the present invention can meet the requirements of the international roadmap for devices and systems (IRDS) for low power consumption devices.
원문 (중국어)
The present invention relates to a single-crystalline AlOdielectric compatible with two-dimensional materials and an integrated device thereof. A single-crystalline Al thin film is produced on a single-crystalline graphene/germanium (110) substrate via the van der Waals (vdW) epitaxy approach, the single-crystalline Al thin film is peeled off from the graphene/germanium substrate, and intercalative oxidation is performed to produce the single-crystalline AlOdielectric compatible with two-dimensional materials on the lower surface of the single-crystalline Al thin film. The gate leakage current (J<1×10A cm), interface state density (D=8.4×10cmeV), and dielectric strength (E=17.4 MV/cm) of the single-crystalline AlOdielectric obtained in the present invention can meet the requirements of the international roadmap for devices and systems (IRDS) for low power consumption devices.