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碳-硅/碳复合材料及其制备方法
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13Claims · 5 independent
§ Ⅰ
Dossier Overview
Inventor
金度兴; 全孝镇; 蔡洙宗; 李珍洙; 朴成修; 尹起灿; 高旻成
Filing Date
Dec 18, 2024
Publication Date
Oct 20, 2026
IPC Classification
C01B 32/05 (2006.01)C01B 33/113 (2006.01)C01B 32/33 (2006.01)C01B 32/36 (2006.01)C01B 33/12 (2006.01)H01M 4/38 (2006.01)H01M 4/36 (2006.01)H01M 4/587 (2006.01)H01M 4/02 (2006.01)
本发明涉及一种碳‑硅/碳复合材料及其制备方法,其中硅/碳复合基质形成在具有受控孔特性的多孔碳载体的表面上和孔内。当根据本发明实施方式的碳‑硅/碳复合材料用作负极活性材料时,能够抑制整体硅尺寸,并且能够抑制晶体‑LiSi(例如LiSi或LiSi)的形成,从而缓解重复充放电过程中电池性能劣化,其中,晶体‑LiSi是导致电池性能劣化的中间相。
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