Back to Search
Dossier
六方氮化硼外延薄膜的制备及剥离方法
InventionUnknown
10Claims · 2 independent
§ Ⅰ
Dossier Overview
Inventor
魏同波; 多亦威; 羊建坤; 王军喜
Filing Date
Apr 21, 2025
Publication Date
Oct 27, 2026
IPC Classification
H10P 14/20 (2026.01)H10P 14/24 (2026.01)C30B 25/02 (2006.01)C30B 29/40 (2006.01)H10F 77/124 (2025.01)H10F 71/00 (2025.01)
本公开提供一种六方氮化硼外延薄膜的制备及剥离方法,涉及半导体制备技术领域。该制备方法包括:提供蓝宝石衬底;采用化学气相沉积法对蓝宝石衬底进行氮化处理;利用氨气和硼化物,在氮化处理后的蓝宝石衬底的表面依次沉积硼氧键层和六方氮化硼层,得到六方氮化硼外延薄膜基片。剥离方法包括:通过氢氟酸湿法腐蚀,对制备得到的六方氮化硼外延薄膜基片进行腐蚀,以剥离六方氮化硼外延薄膜基片中的六方氮化硼层。本公开采用氨气和硼化物在氮化处理后的蓝宝石衬底上,外延生长了高质量的六方氮化硼外延薄膜,并借助氢氟酸对制备得到的六方氮化硼外延薄膜基片进行湿法腐蚀,成功实现了六方氮化硼外延薄膜的制备和湿法剥离。
Sign in to read the full text
Claim 1 is shown. Create a free account to read all 10 claims, the full description, all drawings, translations and legal status.
- All claims
- Technical field
- Background
- Summary
- Drawing descriptions
- Detailed description
External Resources